| 摘要 |
Provided are a stacked integrated circuit device including multiple substrates and a method of manufacturing the same. A first integrated circuit substrate, a first integrated circuit formed on the first integrated circuit substrate, and a first passivation insulating layer are sequentially formed. Then, wafer bonding technique for forming an SOI substrate is used, thereby forming a second integrated circuit substrate on the first passivation insulating layer. While forming a second integrated circuit on the second integrated circuit substrate, at least one device-connecting interconnect electrically connects the first and second Integrated circuits and penetrates the second integrated circuit substrate and the first passivation layer. A second passivation insulating layer is formed on an upper surface of the second integrated circuit. |
