摘要 |
A solid state imaging device, includes: a sensor cell array having a plurality of sensor cells arranged in a matrix on a substrate, each sensor cell including: a photoelectric transducer provided in the substrate and generating photo-generated electric charges according to an incident light; a transfer gate formed on the substrate with a gate insulating layer therebetween; a charge retention region formed under the gate insulating layer and storing the photo-generated electric charges that are transferred from the photoelectric transducer by applying a predetermined potential to the transfer gate; a buried layer formed between the charge retention region and the gate insulating layer; and a floating diffusion storing the photo-generated electric charges that are transferred from the charge retention region by applying a predetermined potential to the transfer gate.
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