发明名称 Wire structure, semiconductor device, MRAM, and manufacturing method of semiconductor device
摘要 The present invention provides a wire structure where reduction in the amount of current that can be made to flow through the wire can be suppressed (a current comprising a large current density can be made to flow), even in the case where the wire is downsized. A wire structure according to the present invention is provided in an insulating film formed on a base. Here, a trench is formed in the surface of the insulating film. In addition, a plurality of carbon nanotubes are included in this trench. That is, the wire structure according to the present invention includes at least a plurality of carbon nanotubes.
申请公布号 US2006086958(A1) 申请公布日期 2006.04.27
申请号 US20050248306 申请日期 2005.10.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 EIMORI TAKAHISA
分类号 H01L29/94 主分类号 H01L29/94
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