| 摘要 |
PROBLEM TO BE SOLVED: To accelerate a polishing speed without lowering a quality of the surface to be polished by combining an electrolytic polishing and a chemical mechanical polishing or chemical buffing. SOLUTION: In a polishing method to polish a metal film 32, which is formed on a surface of a wafer, where a concave-convex pattern is formed, and to embed the recess, the polishing of the metal film 32 is conducted by performing the electrolytic polishing and the chemical mechanical polishing or chemical buffing by turns. COPYRIGHT: (C)2006,JPO&NCIPI
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