| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can make the embedding depth of the element isolation film of a high voltage transistor different from the embedding depth of the element isolation film of a low voltage transistor. SOLUTION: A resist pattern 15 having an opening 12a is formed on a silicon nitride film 10, and an ion irradiated part 11c is formed by ion irradiating a silicon nitride film 11. After a resist pattern 12 is removed, a resist pattern 13 having an opening 13b and an opening 13a arranged on the ion irradiated part 11c is formed on the silicon nitride film 11. Then, a recess 11b and an opening 11a are formed by etching the silicon nitride film 11. Then, a groove 1d is formed under the recess 11b by etching a semiconductor substrate 1 with the silicon nitride film 11 as a mask, and a groove 1c deeper than the groove 1d is formed under the opening 11a. COPYRIGHT: (C)2006,JPO&NCIPI
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