| 摘要 |
PROBLEM TO BE SOLVED: To prevent dopants from diffusing into an active layer when a p-type clad layer is increased in impurity concentration so as to provide a high power semiconductor laser of high reliability. SOLUTION: The semiconductor laser has a configuration wherein a double hetero-junction structure composed of an n-type GaAs buffer layer 201, an n-type AlGaInP clad layer 202, an undoped AlGaInP clad layer 203, an active layer 204, an undoped AlGaInP clad layer 205, a first p-type AlGaInP clad layer 206 (Mg-doped), a second undoped AlGaInP clad layer 207, a p-type GaInP etching stop layer 208, a third p-type AlGaInP clad layer 210 (Zn-doped), and a p-type GaInP contact layer 211 is formed on an n-type GaAs substrate 200. COPYRIGHT: (C)2006,JPO&NCIPI
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