| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a modulating stripe structure in which a driving voltage is reduced, and such characteristics as slope efficiency, threshold current, and FFP are also excellent. SOLUTION: The nitride semiconductor laser element has a ridge stripe structure for confining light in the horizontal direction, which is disposed nearly perpendicular to two opposing resonator surfaces. The stripe structure contains at least a narrow stripe region and a transitional region with the width W1 of the narrow stripe region being within the range of 1.3-1.8μm, and the length L1 of the narrow stripe region is 150μm or over. The maximum width W3 of the transitional region is within the range of 2-4μm, and the length L1 of the narrow stripe region is 85% of the entire length L of the stripe structure. The divergence angleθof the transitional region relative to the narrow stripe region is 2°or below. COPYRIGHT: (C)2006,JPO&NCIPI
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