发明名称 DIAMOND SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a diamond substrate easy in handling at a substrate treating unit and capable of enduring a high temperature as high as the vapor phase growth temperature of diamond, and its manufacturing method. SOLUTION: This diamond substrate 1 has a main surface 13 containing a first region 11 and a second region 12 surrounding the first region 11, and is equipped with a substrate 10 which has a through hole 14 in the first region 11, a single crystalline diamond part 20 which is located in a through hole 14, and a polycrystalline diamond part 30 which is located from the top of the second region 12 to the top of the single crystalline diamond part 20 and fixed to the substrate 10 and the single crystalline diamond part 20. In this construction, the location of the single crystalline diamond part 20 is fixed to the substrate 10 by the polycrystalline diamond part 30. Thus, the handling in the treatment of the diamond substrate 1 using the substrate treating unit becomes easy, and it becomes endurable to a high temperature as high as the vapor phase growth temperature of diamond. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006111500(A) 申请公布日期 2006.04.27
申请号 JP20040302041 申请日期 2004.10.15
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NANBA AKIHIKO;YAMAMOTO YOSHIYUKI;IMAI TAKAHIRO
分类号 C30B29/04;C23C16/27;H01L21/205;H01L29/16 主分类号 C30B29/04
代理机构 代理人
主权项
地址