| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of polycrystal silicon solar cell for efficiently conducting termination process of a polycrystal silicon substrate up to the inside of crystal within a short period of time and thereby for improving processing velocity and also remarkably improving substrate quality. <P>SOLUTION: The manufacturing method of polycrystal silicon solar cell mainly formed of polycrystal silicon substrate comprises the steps of forming an N layer and/or P layer within the polycrystal silicon substrate, forming an insulated layer and an electrode at the front surface of the polycrystal silicon substrate, and the high-pressure vapor terminating step of executing the heat treatment under the gas atmosphere including the vapor in the pressure of 0.2 to 4 MPa at the temperature of 200 to 450°C. With the high-pressure vapor terminating step, non-bonding hands of silicon is terminated with hydrogen or hydroxyl group. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
