Manufacturing method to construct semiconductor-on-insulator with conductor layer sandwiched between buried dielectric layer and semiconductor layers

摘要

A method for treating exposed metal in a semiconductor wafer ( 301 ) in wafer processing is disclosed herein. In accordance with the method, a wafer is provided which is equipped with a metal layer ( 307 ) and a substrate ( 303 ), wherein a portion of the metal layer is exposed at the edge of the wafer. The exposed portion of the metal layer is then covered with a dielectric material ( 317 ).