| 摘要 |
On a silicon substrate 120 of a semiconductor device, a field oxide film 101 is provided. On the field oxide film 101 , two fuses 104 are provided. Directly below the fuses 104 in the silicon substrate 120 , an n-type well 102 is provided. Besides the n-type well 102 , a p-type well 103 is provided in such a manner as to surround a region directly under the fuses 104 in the silicon substrate 120 . A cover insulating film 108 is provided over the silicon substrate 120 and the field oxide film 101 . A seal ring composed of a contact 106 and an interconnection 107 is embedded in the cover insulating film 108 so as to surround the fuses 104.
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