| 摘要 |
A semiconductor memory device has a nonvolatile memory cell to which data writing operation is limited to a predetermined logic value. In the case of rewriting data "10101010" written in a first memory core to data "01010101", since the data writing operation includes writing of a logic value "1" opposite to the predetermined logic value, an erasing operation is needed and the data writing is regulated. By rewriting a pointer value stored in a pointer memory in place of performing the erasing operation, an operation of switching a memory core to be selected to a second memory core (data "11111111") is performed. Data is newly written into the second memory core selected by the rewritten pointer value.
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