| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which a nitride semiconductor element having a semiconductor functional layer and a high-temperature conductive substrate can be manufactured in a short time. <P>SOLUTION: In the method of manufacturing the nitride semiconductor element having the semiconductor functional layer and high-temperature conductive substrate, the high-temperature conductive substrate is bonded to the surface of the semiconductor functional layer after the functional layer is grown on a grown substrate. Then the grown substrate and semiconductor functional layer are separated from each other by irradiating an ultrasonic wave upon the interface between the grown substrate and functional layer. In the method, in addition, the semiconductor functional layers is grown on the grown substrate by providing a vacant space in the interface between the grown substrate and functional layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
