| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novolac type phenolic resin composition for photoresist having features such as excellent sensitivity, resolution and heat resistance in a lithography process in production of a semiconductor or an electrode pattern of a thin panel display. <P>SOLUTION: The novolac type phenolic resin composition for photoresist contains a novolac type phenolic resin obtained by reacting phenols with aldehydes in the presence of an acid catalyst, wherein the phenols include a hydroxynaphthalene compound represented by formula (I) as an essential component. In the formula (I), m denotes an integer of 1-2; and n denotes an integer of 0-1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
