发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus with which the effects on the shape of a sample-carrying port on plasma can be reduced through a simple arrangement. <P>SOLUTION: The plasma processing apparatus comprises a vacuum processing chamber 6 having a port 14 for carrying in or carrying out a substrate being processed; a means 7 for supplying processing gas into the vacuum processing chamber 6; means 4, 8 for generating plasma by supplying high frequency energy to processing gas supplied into the vacuum processing chamber, a lower electrode 10 held movably in the vertical directions in the vacuum processing chamber and holding the substrate being processed, while mounting in the vacuum processing chamber; a tubular carrying port shut-off wall 16 covering the inner circumference of the vacuum processing chamber slidably including the opening of the carrying port; and a portion 17 for coupling the lower electrode and the carrying port shut off wall, wherein the opening of the carrying port 14 is shut off by the carrying port shut off wall 16, when the lower electrode 10 ascends to the operating position of the processing device. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006114676(A) 申请公布日期 2006.04.27
申请号 JP20040300130 申请日期 2004.10.14
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TAKEI HIDENORI;YAGI KATSUJI;MATSUMOTO TAKESHI;MUTO SATORU
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址