| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of improving a reliability on a read operation and an operating speed. <P>SOLUTION: The nonvolatile semiconductor storage device has a plurality of memory cells containing first MOS transistors with charge storage layers and control gates, and second MOS transistors in which drains are connected to sources for the first MOS transistors. The storage device further has word lines formed by connecting the control gates for the first MOS transistors on the same lines in common; and first metallic wiring layers being formed at every word line, being electrically connected to the corresponding word lines, and transmitting first low selecting signals for selecting the word lines by the low decoders. The storage device further has interlayer insulating films being formed on the semiconductor substrate and coating the memory cells and metallic wirings formed at a plurality of levels in the interlayer insulating films. The first metallic wiring layers are formed of the metallic wirings at the level of a lowermost layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
