NROM DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a nonvolatile read only device with a self alignment method. SOLUTION: A method of forming a memory device (and a device obtained as a result) comprises the steps of: forming an electron trap dielectric material on a substrate; forming a conductive material on the dielectric material; forming a material spacer on the conductive material; forming a segment thereof positioned under the material spacer by removing a part of each of the dielectric material and the conductive material; forming inside the substrate first and second spaced regions having a secondary conductivity type different from that of the substrate; extending a channel region between the first and second regions; controlling a conductivity thereof by positioning the segments of the dielectric material and a first conductive material on the first part of the channel region; forming a second conductive material on the second part of the channel region; and controlling a conductivity thereof so as to be isolated from this second conductive material. COPYRIGHT: (C)2006,JPO&NCIPI