| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal which can produce a high quality silicon carbide single crystal by a new technique. SOLUTION: The method comprises raising the temperature of the growing atmosphere up to the growing temperature of the crystal so that the crystal may grow from the seed crystal 7 through feeding a raw material gas to the seed crystal 7, and exposing a cleaned surface of the seed crystal 7 by removing at least the crystal that has been grown from the seed crystal 7 through feeding an etching gas against the seed crystal 7 in addition to the raw material gas while keeping the temperature of the growing atmosphere at the growing temperature of the crystal, and further initiating the growth of the crystal from the cleaned surface of the seed crystal 7 by gradually decreasing the etching gas being fed in addition to the raw material gas while keeping the temperature of the growing atmosphere at the growing temperature of the crystal. COPYRIGHT: (C)2006,JPO&NCIPI
|
