METHOD OF FORMING SILICIDE FILM OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the method of manufacturing the silicide film of a semiconductor device. SOLUTION: Firstly, a first silicide film is formed. Then, in the case where there is a discontinuous part in the first silicide film, a second silicide film electrically connected by a metal substance is formed by selectively depositing the metal substance onto the discontinuous part. Since the above-described method is not only capable of forming a silicide film which does not contain the discontinuous part on a semiconductor gate electrode having the design rule of equal to or less than 80 nm but also not in need for an additional annealing process at a process for connecting the discontinuous part, it is possible to prevent the characteristic degradation of a transistor. COPYRIGHT: (C)2006,JPO&NCIPI