发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To connect a wiring, an electrode, or the like formed of two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption of an active matrix type display device even when the screen size becomes larger. <P>SOLUTION: The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than that of the upper layer. A first conductive layer is formed of Ti or Mo, and a second conductive layer is formed of aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006113571(A) 申请公布日期 2006.04.27
申请号 JP20050268910 申请日期 2005.09.15
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HIGAKI KINSEI;SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI
分类号 G09F9/30;G02F1/1368;H01L29/786;H01L51/50 主分类号 G09F9/30
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