PLASMA SPUTTERING FILM DEPOSITION METHOD AND EQUIPMENT

摘要

A method for generating metal ions by ionizing a metal target (56) by plasma, pulling the metal ions by bias power to an article S which is to be processed and is mounted on a mounting table (20) in a processing container, and depositing a metal film (74) on the article having a recess (2) thus filling the recess. The bias power is set to realize such a state as the metal deposition rate by pulling of metal ions is substantially balanced with the etching rate of plasma sputter etching on the surface of the article. Consequently, the recess in the article can be filled with metal without causing such a defect as void.