| 摘要 |
A polishing machine and a three-chambered polishing head (40) structure and method improve polishing uniformity near the edge of a substrate, especially planarized semiconductor wafers during chemical mechanical polishing (CMP). It provides a method of controlling the pressure over annular regions of the substrate. The method controls a first pressure (1) on the wafer against a polishing pad to affect the material removed from the wafer, controls a second pressure (2) exerted on a retaining ring disposed concentric with the wafer against the polishing pad to affect the manner in which the polishing pad contacts the wafer at a peripheral edge of the wafer, and controls a third pressure (3) exerted within a predetermined annular region proximate an inner region of the retaining ring and an outer edge of the wafer to affect a change to the first and second pressure. Each of the first (1), second (2) and third (3) pressures may be independently controlled. Substrates processed by the method are provided. |
