摘要 |
The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
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申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;ABE, HIROKO;IWAKI, YUJI;YUKAWA, MIKIO;YAMAZAKI, SHUNPEI;ARAI, YASUYUKI;WATANABE, YASUKO;MORIYA, YOSHITAKA |
发明人 |
ABE, HIROKO;IWAKI, YUJI;YUKAWA, MIKIO;YAMAZAKI, SHUNPEI;ARAI, YASUYUKI;WATANABE, YASUKO;MORIYA, YOSHITAKA |