发明名称 STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a low-priced storage device which never restricts a specification for memory, increases productivity and is easily handled by a user even if the memory is mounted on the same substrate as in other functional circuits. <P>SOLUTION: The storage device has a semiconductor film having two dopant regions, a gate electrode, and a memory cell including two wires each connected to the dopant regions on an insulating surface; and for the memory cell, two wires are insulated by applying voltage to at least any one of the gate electrode and two wires out of the gate electrode and two wires to deteriorate the semiconductor film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006114875(A) 申请公布日期 2006.04.27
申请号 JP20050164090 申请日期 2005.06.03
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KATO KIYOSHI;YAMAGUCHI TETSUJI;ASANO ETSUKO;IZUMI KONAMI
分类号 H01L27/10;G11C17/12;H01L29/786 主分类号 H01L27/10
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