| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can enhance performance of a row decoder. <P>SOLUTION: The nonvolatile semiconductor storage device is equipped with a first MOS transistor having an electric charge accumulation layer and a control gate, multiple memory cells including a second MOS transistor with its drain connected to a source of the first MOS transistor, a word line for commonly connecting the control gate of the first MOS transistor in the same row, and a row decoder 20 for selecting the word line. The row decoder 20 is equipped with a first address decoding circuit 141 for decoding an m bits among n bits row-address signals indicating the row direction of the memory cell array, a second address decoding circuit 142 for decoding the (n-m) bits among the row address signals, and a transfer gate 150 for providing output of the first address decoding circuit 141 to the word line in accordance with the output of the second address decoding circuit 142. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
