| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor capable of suppressing the occurrence of crosstalk. SOLUTION: The image sensor of CMOS system includes a substrate on which an epitaxial layer is deposited, a plurality of photodiodes to be embedded in the epitaxial layer, and a plurality of field oxide films interposed between the photodiodes to insulate the photodiodes. Each field oxide film includes a trench formed in the epitaxial layer, a first oxide layer to be deposited on the inner surface of the trench, a reflective layer deposited on the first oxide layer and reflecting incident light to the side of the photodiode, and a second film formed on the reflective layer. COPYRIGHT: (C)2006,JPO&NCIPI
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