SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A plurality of origin patterns (3) containing metal catalyst are formed on the upper part of a semiconductor substrate (1). An insulating film (4) is formed to cover the origin patterns (3). A groove from which the side surfaces of the origin patterns (3) are exposed at both edges is formed on the insulating film (4). Then, carbon nano tube (5) provided with conductive chirality is grown in the groove and wiring is formed. Then, an interlayer insulating film is formed so as to cover the carbon nano tube.