| 摘要 |
FIELD: semiconductor device manufacture. ^ SUBSTANCE: assembled semiconductor devices are treated at finishing stage with high-energy electrons at dose rate of 8 . 1014 - 6 . 1015 cm-2 and energy of 4 MeV followed by annealing at temperature of 150 - 200 °C for minimum 3 h. ^ EFFECT: enhanced power output, manufacturability, reliability, and yield; enlarged working range. ^ 1 cl, 1 tbl |
