发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, NONCONTACT ELECTRONIC EQUIPMENT, AND PORTABLE INFORMATION TERMINAL
摘要 <P>PROBLEM TO BE SOLVED: To lessen parasitic capacity added between antenna terminals, in a semiconductor integrated circuit device where a rectifying device constituting a rectifying circuit is constituted of a MOS transistor whose gate terminal is connected to one antenna joining terminal and whose source terminal is connected to the other antenna joining terminal. <P>SOLUTION: A first MOS transistor M3 whose gate terminal is connected to a second input terminal is connected between a first input terminal and a first output terminal. The bulk terminal of the first MOS transistor M3 is controlled by the output terminal of a first bulk terminal control circuit connected between the first input terminal and the second input terminal. Likewise, the bulk terminal of a second MOS transistor M5 connected between the second input terminal and the first output terminal is controlled by the output terminal of a second bulk terminal control circuit connected between the first input terminal and the second input terminal. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006115579(A) 申请公布日期 2006.04.27
申请号 JP20040298548 申请日期 2004.10.13
申请人 RENESAS TECHNOLOGY CORP 发明人 WATANABE KAZUKI;KAWAJIRI YOSHIKI;TSUNODA HISATAKA
分类号 H02M7/12;G06K19/07;G11C11/413;H01L21/822;H01L27/04;H02M7/219 主分类号 H02M7/12
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