发明名称 REACTIVE ION ETCHING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a reactive ion etching device capable of facilitating etching in microfabrication on a width of 0.3μm or smaller without causing etch stop by using magnetic neutral loop discharge. SOLUTION: The reactive dry etching device is configured in such a way as to employ an NLD etching device, to introduce an etching assist gas from an upper part of a vacuum chamber, to introduce a main etching gas to a substrate side near a magnetic neutral line, and to exhaust the gases from a lower part of a substrate electrode so as to increase an effective exhaust velocity thereof in a low pressure environment. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006114933(A) 申请公布日期 2006.04.27
申请号 JP20060002672 申请日期 2006.01.10
申请人 ULVAC JAPAN LTD 发明人 CHIN TAKASHI;ITO MASAHIRO;HAYASHI TOSHIO
分类号 H01L21/3065;C23F4/00 主分类号 H01L21/3065
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