发明名称 |
Method for making a passivated semiconductor substrate |
摘要 |
The present invention is related to a method for making a passivated semiconductor substrate comprising the steps of providing a substrate surface comprising or consisting of mono-crystalline semiconductor material other than silicon and forming a silicon layer on the substrate surface, such that the silicon layer is substantially lattice matched to the mono-crystalline semiconductor material. It is also related to a semiconductor substrate passivated according to the method.
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申请公布号 |
US2006086950(A1) |
申请公布日期 |
2006.04.27 |
申请号 |
US20050249642 |
申请日期 |
2005.10.13 |
申请人 |
CAYMAX MATTY;BONZOM RENAUD;LEYS FREDERIK;MEURIS MARC |
发明人 |
CAYMAX MATTY;BONZOM RENAUD;LEYS FREDERIK;MEURIS MARC |
分类号 |
H01L29/732 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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