摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an alignment mark for realizing overlay excellent in accuracy in a photoengraving process or the like, and to provide its manufacturing method. <P>SOLUTION: The method comprises a process of forming a first layer and a second layer on a substrate; a process of forming a first trench in a component forming region and an alignment mark forming region; a process of forming a second trench by further etching the first trench of the alignment mark forming region among the first trenches, and of reducing the thickness of the second layer of the alignment mark forming region simultaneously; a process of depositing an insulating film on the second layer so that it may embed the first trench and the second trench; a process of planarizing the insulating film into a state in which the insulating film is left on the second layer of the alignment mark forming region; a process of removing the second layer of the component forming region by etching using the insulating film left on the second layer of the alignment mark forming region as an etching mask; and an insulating film removing process of removing the insulating film of the alignment mark forming region by etching. <P>COPYRIGHT: (C)2006,JPO&NCIPI |