| 摘要 |
A leakage current control device of a semiconductor memory device is provided to effectively remove leakage current flowing from a bit line to a word line when a process defect is generated by gate residues of the semiconductor memory device, thereby reducing unnecessary current consumption. In the leakage current control device, the bit line boosted to a voltage level of core voltage/2 is controlled at a ground voltage level during a precharge period to remove unnecessary leakage current flowing from the bit line to a word line bridge.
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