发明名称 |
Fabrication method for a deep trench isolation structure of a high-voltage device |
摘要 |
A fabrication method for a semiconductor device. On a semiconductor silicon substrate with a first type conductivity, an epitaxial layer with a second type conductivity and an oxide layer on the epitaxial layer are formed with at least a deep trench. Ion implantation is used to form an ion diffusion region with the first type conductivity which is formed in the epitaxial layer and surrounds the sidewall and bottom of the deep trench. An oxide liner is formed on the sidewall and bottom of the deep trench, and then an undoped polysilicon layer is formed to fill the deep trench. The combination of the ion diffusion region and the undoped polysilicon layer serves as a deep trench isolation structure.
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申请公布号 |
US7041572(B2) |
申请公布日期 |
2006.05.09 |
申请号 |
US20040793773 |
申请日期 |
2004.03.08 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YANG JIA-WEI;LIAO CHIH-CHERNG |
分类号 |
H01L21/76;H01L21/336;H01L21/763 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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