发明名称 PIEZOELECTRIC THIN-FILM RESONATOR AND ITS FABRICATING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin-film resonator whose Q can be improved by decreasing energy losses in acoustic reflection layers, and besides to provide its fabricating method. <P>SOLUTION: The piezoelectric thin-film resonator is equipped with a pair of opposed excitation electrodes 16, 20, a piezoelectric thin film 14 arranged between the pair of the excitation electrodes 16, 20, and a substrate 12 for supporting one electrode 20 of the pair of the excitation electrodes. The one 20 of the pair of the excitation electrodes includes the acoustic reflection layers 21 to 26. The substrate 12 comprises a single crystal of LiTaO<SB>3</SB>or of LiNbO<SB>3</SB>. The acoustic reflection layers 21 to 26 each comprise an (a) epitaxial conductive material formed alternately on the substrate 12, at least one of first layers 21, 23, 25 whose acoustic impedance is relatively high; and (b) the other epitaxial conductive material, and besides including an at least one of second layer 22, 24, 26 whose acoustic impedance is relatively low. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006166036(A) 申请公布日期 2006.06.22
申请号 JP20040354733 申请日期 2004.12.07
申请人 MURATA MFG CO LTD 发明人 UMEDA KEIICHI;NAKAGAWARA OSAMU
分类号 H03H9/17;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/29;H03H3/02 主分类号 H03H9/17
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