Schottky device

摘要

A regular Schottky diode or a device that has a Schottky diode characteristic and an MOS transistor are coupled in series to provide a significant improvement in leakage current and breakdown voltage with only a small degradation in forward current. In the reverse bias case, there is a small reverse bias current but the voltage across the Schottky diode remains small due the MOS transistor. Nearly all of the reverse bias voltage is across the MOS transistor until the MOS transistor breaks down. This transistor breakdown, however, is not initially destructive because the Schottky diode limits the current. As the reverse bias voltage continues to increase the Schottky diodes begins to absorb more of the voltage. This increases the leakage current but the breakdown voltage is a somewhat additive between the transistor and the Schottky diode.