Method and circuit for locating anomalous memory cells

摘要

A method for locating in an array of memory cells a set of cells having a stand-by current that exceeds a certain value based on their programming state. The method includes selecting all the cells of the array of memory cells as a set of cells to be tested, and dividing the set of cells to be tested into subsets of cells, and repeatedly sensing a stand-by current absorbed by the array of memory cells after having changed the programming state of the subsets of cells. The sensed stand-by currents are compared and a subset of cells having a stand-by current exceeding the certain value are identified as a function of the comparison. The identified subset of cells is selected as a new set of cells to be tested, and the method is repeated. Otherwise, the testing stops with the just tested subset of cells having a stand-by current exceeding the certain value.