| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent generation of memory initialization omission (non-initialization) hardly detected in a development process. <P>SOLUTION: This memory device having a detection function of the initialization leakage of a memory has a memory initialization state management circuit performing control to reset an overhead bit 215 by power ON (a power source ON) and to invert the overhead bit 215 of an initialized word only once in the memory 109 having the additional bit (including a parity bit) disposed to each the word of the memory device. The initialization omission detection function of the memory generates an interrupt when the overhead bit 215 of the word read by the memory initialization state management circuit is in a non-inversion state, and outputs a read address. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
