| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which achieves high output and long life laser and which is reliable. SOLUTION: The nitride semiconductor light emitting device has an n-side cladding layer on a upper part of a substrate consisting of a nitride semiconductor and is provided with an active layer having a multiple quantum well on the upper part of the n-side cladding layer. Between the substrate and the n-side cladding layer, a medium layer containing a nitride semiconductor layer is formed separated from the n-side cladding layer. Thus, cleavability of nitride semiconductor substrate is improved to improve an yield. COPYRIGHT: (C)2006,JPO&NCIPI
|
