发明名称 |
Method for manufacturing vertical structure light emitting diode |
摘要 |
A method for manufacturing a vertical light emitting diode of the invention allows an easier process of individually separating chips. A light emitting structure is formed on a growth substrate having a plurality of device areas and at least one device isolation area. The light emitting structure has an n-type clad layer, an active layer and a p-type clad layer sequentially formed therein. Corresponding p-type electrodes are formed on the light emitting structure on the device areas. A glass substrate having through holes perforated therein is provided on the p-electrodes so that the through holes are disposed corresponding to the p-electrodes. Also, the through holes are plated with a metal material to form patterns of a plating layer on the p-electrodes. Then, the growth substrate is removed to form n-electrodes on the n-type clad layer. The glass substrate is removed via etching. |
申请公布号 |
US7442565(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20060522407 |
申请日期 |
2006.09.18 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
RYU YUNG HO;HWANG HAE YOUN |
分类号 |
H01L21/00;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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