| 摘要 |
<p>A method for checking stability of a cleaning process is provided to enhance stability of a BEOL(Back End Of Line) process by using a wafer. A metal layer(12) and an ARC(Anti-Reflective Coating) layer are sequentially formed on a wafer(10). A photoresist(14) is coated on the wafer to form a pattern(15) by performing a wafer etch process. The etched wafer is cleaned by using a cleaning solution including IPA(Iso-Propyl Alcohol). The cleaned wafer is checked. The etch process and the cleaning process are continuously performed without a standby time. The cleaning process is performed by using two tanks including organic solvents, two kinds of IPA, and a drier.</p> |
