| 摘要 |
<p>A method for manufacturing photomasks is provided to improve critical dimension uniformity of phase shift film patterns by compensating for critical dimension of light shield film patterns in the manufacturing of the photomasks. A resist pattern(131) is formed on a transparent substrate(100) including a light shield film. By using the resist pattern as an etch mask, a light shield film pattern(121) is formed. By radiating ultraviolet ray on the resist pattern, the resist pattern is shrunk. By etching a light shield film pattern exposed by the shrunk resist pattern, critical dimension of the light shield film pattern is compensated. Then the resist pattern is removed.</p> |
