Apparatus, system, and method for modifying memory voltage and performance based on a measure of memory device stress

摘要

An apparatus, system, and method are disclosed for modifying memory device timing and voltage. A detection module detects a change of memory device stress. A timing modification module modifies the memory device timing in response to the change of the memory device stress. In addition, a voltage modification module modifies the memory device voltage in response to the change of the memory device stress. In one embodiment, a processor pause module pauses the operation of a processor module while the timing modification module modifies the memory device timing and the voltage modification module modifies the memory device voltage.