发明名称 |
CMOS image sensor and method for manufacturing the same |
摘要 |
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiodes region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.
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申请公布号 |
US7442994(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20050320469 |
申请日期 |
2005.12.29 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
HA HYEON WOO |
分类号 |
H01L31/113;H01L27/14;H01L27/146;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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