发明名称 |
Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer |
摘要 |
A method of forming a semiconductor structure comprising a first strained semiconductor layer over an insulating layer is provided in which the first strained semiconductor layer is relatively thin (less than about 500 Å) and has a low defect density (stacking faults and threading defects). The method of the present invention begins with forming a stress-providing layer, such a SiGe alloy layer over a structure comprising a first semiconductor layer that is located atop an insulating layer. The stress-providing layer and the first semiconductor layer are then patterned into at least one island and thereafter the structure containing the at least one island is heated to a temperature that causes strain transfer from the stress-providing layer to the first semiconductor layer. After strain transfer, the stress-providing layer is removed from the structure to form a first strained semiconductor island layer directly atop said insulating layer.
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申请公布号 |
US7442993(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20050293774 |
申请日期 |
2005.12.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;DOMENICUCCI ANTHONY G.;FOGEL KEITH E.;LEOBANDUNG EFFENDI;SADANA DEVENDRA K. |
分类号 |
H01L31/392 |
主分类号 |
H01L31/392 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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