发明名称 |
Method for fabricating forward and reverse blocking devices |
摘要 |
A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.
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申请公布号 |
US7442630(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20050217134 |
申请日期 |
2005.08.30 |
申请人 |
IXYS CORPORATION |
发明人 |
KELBERLAU ULRICH;INGRAM PETER;ZOMMER NATHAN |
分类号 |
H01L21/04;H01L21/265;H01L21/331;H01L29/06;H01L29/739 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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