发明名称 Control of memory devices possessing variable resistance characteristics
摘要 Systems and methods employing at least one constant current source to facilitate programming of an organic memory cell and/or employing at least one constant voltage source to facilitate erasing of a memory device. The present invention is utilized in single memory cell devices and memory cell arrays. Employing a constant current source prevents current spikes during programming and allows accurate control of a memory cell's state during write cycles, independent of the cell's resistance. Employing a constant voltage source provides a stable load for memory cells during erase cycles and allows for accurate voltage control across the memory cell despite large dynamic changes in cell resistance during the process.
申请公布号 US7443710(B2) 申请公布日期 2008.10.28
申请号 US20040983919 申请日期 2004.11.08
申请人 SPANSION, LLC 发明人 FANG TZU-NING;VAN BUSKIRK MICHAEL ALLEN;BILL COLIN S.
分类号 G11C11/00 主分类号 G11C11/00
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