发明名称 Semiconductor memory device for storing multivalued data
摘要 Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining the first memory cells in the bit line direction.
申请公布号 US7443724(B2) 申请公布日期 2008.10.28
申请号 US20070949649 申请日期 2007.12.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIBATA NOBORU;TANAKA TOMOHARU
分类号 G11C16/02;G11C16/04;G11C11/56;G11C16/06 主分类号 G11C16/02
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