发明名称 |
Liquid crystal display device having polycrystalline silicon thin film transistor and method of fabricating the same |
摘要 |
A method of fabricating an array substrate for a liquid crystal display device includes forming an alignment key on a substrate having a display region and a non-display region surrounding the display region; forming an amorphous silicon layer on the alignment key; crystallizing a predetermined portion of the amorphous silicon layer using the alignment key as a reference; patterning the amorphous silicon layer using the alignment key as a reference to form a polycrystalline silicon layer, the polycrystalline silicon layer being formed from the predetermined portion of the amorphous silicon layer; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer using the alignment key as a reference; forming an interlayer insulating layer on the gate electrode; and forming source and drain electrodes on the interlayer insulating layer.
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申请公布号 |
US7443457(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20040865790 |
申请日期 |
2004.06.14 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
SEO HYUN-SIK;KIM YOUNG-JOO;KIM SANG-HYUN |
分类号 |
G02F1/136;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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