发明名称 |
Methods of manufacturing semiconductor structures using RIE process |
摘要 |
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.
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申请公布号 |
US7442650(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20070621660 |
申请日期 |
2007.01.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BIOLSI PETER;CHOI SAMUEL S;MACKEY KEVIN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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